by HuaweiCN
Enable Chinese chip production with domestic 13.5nm lithography by 2028-2030
Prototype completed early 2025, undergoing testing. Chip production targeted 2028, 2030 more realistic.
Updated Dec 2025Checked 11 Oct0 updates this week
Solid-state laser vaporizes tin between electrodes. High-voltage discharge creates plasma emitting 13.5nm EUV light, avoiding ASML's patented approach.
Harbin Institute: LDP light source (~100–150W). Changchun Institute (CIOMP): optics. SMEE: system integration.
Prototype generates stable 13.5nm EUV and integrated optics for exposure. Current ~100–150W limits throughput to ~40–60 wafers/hour.
| Spec | China EUV Lithography |
|---|---|
| EUV light source output | 100–150 wattsR (reported) |
| Estimated current wafer throughput | 40–60 wafers/hourE (estimated) |
| Energy conversion efficiency | 3.42%R (reported) |
| Commercial target efficiency | 5.5–6%R (reported) |
R reported by the company · E our estimate
Huawei
Ascend NPU, Atlas SuperPoD, telecommunications
Huawei designs semiconductors, cloud systems and telecoms gear in 170 countries. Founded 1987, it grew to lead telecoms infrastructure. Now competing directly with NVIDIA in AI accelerators with the Ascend chip series.
