Huawei tests new EUV prototype at Dongguan facility using laser-induced discharge plasma source

Huawei/China EUV Lithography

In March 2025, DIGITIMES reported that Huawei was testing an EUV prototype at its Dongguan facility using laser-induced discharge plasma (LDP) technology developed with the Harbin Institute of Technology and SMEE. The system was scheduled for Q3 2025 trial production. The LDP approach differs from ASML's laser-produced plasma and aims to be more cost-effective.

• Prototype installed at Huawei's Dongguan factory (Songshan Lake base) for testing.
• LDP uses solid-state laser to vaporize tin and high-voltage discharge to produce plasma, avoiding ASML's patented LPP path.
• Q3 2025 trial production target set; aims to reduce dependence on ASML's monopoly.
• Developed collaboratively by Harbin Institute (light source), Changchun Institute (optics), and SMEE (integration).
• Part of China's broader effort to achieve semiconductor self-sufficiency in advanced chipmaking.