China EUV lithography prototype completed in Shenzhen; Huawei coordinates 3,000-researcher effort

Huawei/China EUV Lithography

In December 2025, Reuters reported that China completed an EUV lithography prototype in a high-security Shenzhen laboratory. The machine is built by a team including former ASML engineers and uses laser-induced discharge plasma (LDP) technology developed by the Harbin Institute, with optics from Changchun and system integration by Shanghai Micro Electronics Equipment (SMEE). The prototype generates stable 13.5nm EUV light but has not produced functional chips. Current light-source output is 100–150W, producing an estimated 40–60 wafers/hour. Production timelines: trial in Q3 2025, realistic chip production 2030.

• Prototype completed in early 2025 at high-security Shenzhen facility after multi-year national effort.
• Uses laser-induced discharge plasma: solid-state lasers vaporize tin, high-voltage discharge creates plasma emitting 13.5nm EUV light.
• Harbin Institute developed light source; Changchun Institute (CIOMP) supplies optics; SMEE integrates the full system.
• Current light-source output ~100–150W, estimated to produce 40–60 wafers/hour; commercial systems require ~250W and higher efficiency.
• Prototype has generated and integrated EUV light but not yet produced functional chips; yields and reliability at scale remain unproven.