SK hynix installs the first production High-NA EUV tool (EXE:5200B) for DRAM at its M16 fab

ASML/High-NA EUV (EXE)

SK hynix installed ASML's TWINSCAN EXE:5200B at its M16 fab in Icheon, the first High-NA EUV machine for mass production. Its larger lens aperture (0.55 vs. 0.33) prints transistors 1.7 times smaller for 2.9 times the density, which SK hynix plans to use to simplify next-generation DRAM manufacturing steps.

• EXE:5200B is the first High-NA EUV tool deployed for commercial DRAM production.
• NA improved from 0.33 to 0.55, a 40% aperture improvement.
• Transistor size reduced 1.7× and density increased 2.9× vs. conventional EUV.
• SK hynix will use High-NA to simplify DRAM process steps and accelerate next-gen development.