TSMC begins volume production of N2, its first gate-all-around node

TSMC/N2 process

TSMC began volume production of N2, its 2nm-class process, in Q4 2025 as planned. N2 uses first-generation nanosheet transistor technology (not gate-all-around), with the gate structure controlling current leakage better than the previous fin design.

• N2 uses nanosheet transistor technology, not gate-all-around as initially promoted.
• Volume production began in Q4 2025 as planned.
• Industry-leading density and energy efficiency with low-resistance redistribution layer and high-performance capacitors.
• N2P enhanced variant is scheduled for the second half of 2026.