Taylor Fab (SF2) by Samsung: status and timeline

Taylor Fab (SF2)

Samsung's Taylor foundry in Texas operates a gate-all-around 2nm process. Tesla's AI5 chip reached tape-out in July 2026 with volume production expected in H2 2027. Broadcom is also booked for 2nm production.

DeployStage 4 of 5

2nm production ramping; Tesla AI5 tape-out in July 2026, volume production H2 2027; Broadcom also booked.

Updated Jul 2026Checked 10 Oct0 updates this week

Milestones

Next · Tesla AI5 volume production

Taylor fab groundbreakingNov 2022Complete.
Taylor fab 2nm line operational2026Complete.
Tesla AI5 tape-outJul 2026Complete.
Tesla AI5 volume productionTarget 2027Not yet reached.

Most important updates

Samsung's Taylor fab ready for Tesla AI5 at 2nm after July tape-outJul 2026

Upcoming

2027Tesla AI5 volume production (next)

Current obstacles

Yield rampRamping 2nm yields to full production takes time; early wafers have higher defect rates.

Physics limits

Process node floorBelow 2nm, quantum tunneling and other physical effects make transistors harder to control.

How it works

2 parts

GAA transistors

Gate-all-around design

2nm GAA wraps the gate around all four sides of the transistor channel, improving control and reducing leakage.

Production

High-volume manufacturing

Taylor fab is set up for volume production, not prototyping, with capacity to serve Tesla and Broadcom's needs.

Spec sheet

Spec	Taylor Fab (SF2)
Process node	2nm GAA^R (reported)
Location	Taylor, Texas, USA^R (reported)

^R reported by the company

Peer comparison

Chip factories (foundries) peers

Spec	Taylor Fab (SF2)	Rapidus IIM-1 Pilot Fab
Process node	2nm GAA^R (reported)	2nm^R (reported)
Location	Taylor, Texas, USA^R (reported)	Chitose, Hokkaido, Japan^R (reported)

^R reported by the company

Update log

1 update

Jul 2026

Major: Samsung's Taylor fab ready for Tesla AI5 at 2nm after July tape-outPressManufacturing

About Samsung

The team behind Taylor Fab (SF2)

Samsung

Semiconductor foundry, memory, chips, 2nm

Samsung manufactures semiconductors at foundries in Korea and the US. Its Semiconductor division makes NAND and DRAM memory, operates 2nm foundry fabs, and provides advanced packaging.

Samsung's Semiconductor division is the world's largest NAND producer and #2 DRAM supplier after SK Hynix.
Samsung's Taylor fab in Texas began producing Tesla's 2nm AI5 chips in July 2026.
Samsung was first to mass-produce HBM4 memory in February 2026, with expected 28% of the HBM4 market.

samsung.com (opens samsung.com)Company profile →

Founded: 193888 yrs
Headquarters: South Korea
Status: Public
Valuation: public
Works in: ComputingChip factories (foundries)
Coverage: 2 programs · 2 updateslatest 1 Jul 2026checked 10 Oct
Customers: Tesla (opens tesla.com)Broadcom (opens broadcom.com)
People: Lee Jae-yong (opens en.wikipedia.org)Chairman

Spec

Taylor Fab (SF2)

Process node

2nm GAA^R (reported)

Location

Taylor, Texas, USA^R (reported)

Spec

Taylor Fab (SF2)

Rapidus IIM-1 Pilot Fab

Process node

2nm GAA^R (reported)

2nm^R (reported)

Location

Taylor, Texas, USA^R (reported)

Chitose, Hokkaido, Japan^R (reported)