by SamsungKR
Samsung's HBM4 (high-bandwidth memory) operates at 10.7–11.7 gigabits per second, the fastest DRAM standard as of 2026. It powers AI accelerators and scientific instruments like Vera Rubin.
Mass production began Feb 2026; supplying Vera Rubin and AI accelerators; ~28% market share projected.
Updated Feb 2026Checked 10 Oct0 updates this week
HBM4 stacks 12 layers of DRAM dies with micro-bumps to maximize bandwidth without increasing footprint.
At 10.7–11.7 Gb/s, HBM4 is faster than HBM3 (6.4 Gb/s per pin), allowing significantly more data per cycle to accelerators.
| Spec | HBM4 |
|---|---|
| Bandwidth | 10.7–11.7 Gb/sR (reported) |
| Projected HBM4 market share | ~28%E (estimated) |
R reported by the company · E our estimate
Samsung
Semiconductor foundry, memory, chips, 2nm
Samsung manufactures semiconductors at foundries in Korea and the US. Its Semiconductor division makes NAND and DRAM memory, operates 2nm foundry fabs, and provides advanced packaging.
