ASML demonstrates a 1,000 W EUV light source, aiming for about 50% more wafers per hour by 2030

ASML/Low-NA EUV (NXE)

ASML said it raised EUV light source power from 600 W to 1,000 W by doubling tin droplets to 100,000 per second with two laser bursts. A brighter source lets each machine expose wafers faster—from 220 to 330 wafers per hour by 2030—roughly 50% more output per tool.

• EUV power doubled from 600 W to 1,000 W using increased tin droplets (100,000/second) and dual laser bursts.
• Throughput improvement: ~220 wafers/hour today to ~330 wafers/hour by 2030, approximately 50% increase.
• Enhanced power reduces exposure time per wafer, cutting per-chip costs for chipmakers.