U.S. DRAM Fabs (Idaho & New York)

by Micron TechnologyUS

Establish leading-edge DRAM and HBM production in the U.S. to serve AI demand and reduce supply chain reliance on Taiwan and South Korea.

DeployStage 4 of 5

ID1 wafer production targeted mid-2027. ID2 late 2028. Clay NY fab 2030.

Updated Apr 2024Checked 11 Oct0 updates this week

Milestones

Next · ID1 DRAM wafer production begins
  1. ID1 DRAM wafer production beginsTarget Jul 2027Not yet reached.
  2. ID2 construction beginsTarget Q4 2026Not yet reached.
  3. ID2 initial wafer outputTarget Q4 2028Not yet reached.
  4. Clay NY Phase 1 fab operationalTarget 2030Not yet reached.

Most important updates

Upcoming

  1. Q4 2026ID2 construction begins (next)
  2. Jul 2027ID1 DRAM wafer production begins
  3. Q4 2028ID2 initial wafer output
  4. 2030Clay NY Phase 1 fab operational
Primer