Enable advanced metallization for next-generation memory and logic.
Announced Feb 2025; now in production at leading 3D NAND and DRAM makers.
Checked 11 Oct0 updates this week
ALD deposits one monolayer at a time by alternating between precursor and reactant exposures, achieving conformal coverage even in high-aspect-ratio features.
Molybdenum serves as both diffusion barrier and conductor, eliminating the separate barrier layer used in tungsten metallization and lowering resistance.
| Spec | ALTUS Halo |
|---|---|
| Resistance reduction vs. tungsten | 50%R (reported) |
| Primary applications | 3D NAND interconnect, DRAM metallizationR (reported) |
R reported by the company
Lam Research
Plasma etch, ALD deposition, Akara, ALTUS Halo
Lam Research designs semiconductor manufacturing equipment for etch and ALD. Akara is their latest conductor etch tool; ALTUS Halo is the first production molybdenum ALD tool.
